Description
Highlights
- – 4GB Notebook RAM
- – DDR3L 1600MHz
- – Voltage 1.35V
- – 204-pin SODIMM
Product Description
- – JEDEC standard 1.35V (1.28V ~ 1.45V) and 1.5V (1.425V ~ 1.575V) Power Supply
- – VDDQ = 1.35V (1.28V ~ 1.45V) and 1.5V (1.425V ~ 1.575V)
- – 800MHz fCK for 1600Mb/sec/pin
- – 8 independent internal bank
- – Programmable CAS Latency: 11, 10, 9, 8, 7, 6
- – Programmable Additive Latency: 0, CL – 2, or CL – 1 clock
- – 8-bit pre-fetch
- – Burst Length: 8 (Interleave without any limit, sequential with
- – starting address “000” only), 4 with tCCD = 4 which does not allow seamless read or write [either on the fly using A12 or MRS]
- – Bi-directional Differential Data Strobe
- – Internal(self) calibration : Internal self calibration through ZQ pin (RZQ : 240 ohm ± 1%)
- – On Die Termination using ODT pin
- – Average Refresh Period 7.8us at lower than TCASE 85°C,3.9us at 85°C < TCASE < 95°C – Asynchronous Reset
- – PCB: Height 1.18” (30mm), double sided component
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