Kingston 4GB DDR3L 1600MHz Low Voltage Ram FOR PC

Name: Kingston 4GB DDR3L 1600MHz Low Voltage Ram FOR PC
Brand: Kingston
SKU: RAM-KSTN-KVR16LN114
Availability: OutOfStock

RM125.00

Highlights

Product Description

– JEDEC standard 1.35V (1.28V ~ 1.45V) and 1.5V (1.425V ~ 1.575V) Power Supply
– VDDQ = 1.35V (1.28V ~ 1.45V) and 1.5V (1.425V ~ 1.575V)
– 800MHz fCK for 1600Mb/sec/pin
– 8 independent internal bank
– Programmable CAS Latency: 11, 10, 9, 8, 7, 6
– Programmable Additive Latency: 0, CL – 2, or CL – 1 clock
– 8-bit pre-fetch
– Burst Length: 8 (Interleave without any limit, sequential with
– starting address “000” only), 4 with tCCD = 4 which does not allow seamless read or write [either on the fly using A12 or MRS]
– Bi-directional Differential Data Strobe
– Internal(self) calibration : Internal self calibration through ZQ pin (RZQ : 240 ohm ± 1%)
– On Die Termination using ODT pin
– Average Refresh Period 7.8us at lower than TCASE 85°C,3.9us at 85°C < TCASE < 95°C – Asynchronous Reset
– PCB: Height 1.18” (30mm), double sided component

Out of stock

Description

Highlights

Product Description

– JEDEC standard 1.35V (1.28V ~ 1.45V) and 1.5V (1.425V ~ 1.575V) Power Supply
– VDDQ = 1.35V (1.28V ~ 1.45V) and 1.5V (1.425V ~ 1.575V)
– 800MHz fCK for 1600Mb/sec/pin
– 8 independent internal bank
– Programmable CAS Latency: 11, 10, 9, 8, 7, 6
– Programmable Additive Latency: 0, CL – 2, or CL – 1 clock
– 8-bit pre-fetch
– Burst Length: 8 (Interleave without any limit, sequential with
– starting address “000” only), 4 with tCCD = 4 which does not allow seamless read or write [either on the fly using A12 or MRS]
– Bi-directional Differential Data Strobe
– Internal(self) calibration : Internal self calibration through ZQ pin (RZQ : 240 ohm ± 1%)
– On Die Termination using ODT pin
– Average Refresh Period 7.8us at lower than TCASE 85°C,3.9us at 85°C < TCASE < 95°C – Asynchronous Reset
– PCB: Height 1.18” (30mm), double sided component