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Kingston 4GB DDR3 1333MHz Sodim NB Ram

Name: Kingston 4GB DDR3 1333MHz Sodim NB Ram
Brand: Kingston
SKU: RAM-KSTN-KVR13S9S84
Availability: OutOfStock

Original price was: RM155.00.Current price is: RM135.00.

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JEDEC standard 1.5V (1.425V ~1.575V) Power Supply
VDDQ = 1.5V (1.425V ~ 1.575V)
667MHz fCK for 1333Mb/sec/pin
8 independent internal bank
Programmable CAS Latency: 9, 8, 7, 6
Programmable Additive Latency: 0, CL – 2, or CL – 1 clock
Programmable CAS Write Latency(CWL) = 7 (DDR3-1333)
8-bit pre-fetch

This document describes ValueRAM’s 512M x 64-bit (4GB) DDR3-1333 CL9 SDRAM (Synchronous DRAM), 1Rx8 memory module, based on eight 512M x 8-bit DDR3-1333 FBGA components. The SPD is programmed to JEDEC standard latency DDR3-1333 timing of 9-9-9 at 1.5V. This 204-pin SODIMM uses gold contact fingers. The electrical and mechanical specifications are as follows:

CL(IDD)	9 cycles
Row Cycle Time (tRCmin)	49.5ns (min.)
Refresh to Active/Refresh Command Time (tRFCmin)	260ns (min.)
Row Active Time (tRASmin)	36ns (min.)
Power (Operating)	1.980 W*
UL Rating	94 V – 0
Operating Temperature	0° C to 85° C
Storage Temperature	-55° C to +100° C

Features

Burst Length: 8 (Interleave without any limit, sequential with starting address “000” only), 4 with tCCD = 4 which does not allow seamless read or write [either on the fly using A12 or MRS]
Bi-directional Differential Data Strobe
Internal(self) calibration : Internal self calibration through ZQ pin (RZQ : 240 ohm ± 1%)
On Die Termination using ODT pin
Average Refresh Period 7.8us at lower than TCASE 85°C, 3.9us at 85°C < TCASE < 95°C
Asynchronous Reset
PCB: Height 1.18” (30mm), double sided component

Out of stock

SKU: RAM-KSTN-KVR13S9S84 Category: RAM Tags: kingston, KINGSTON 4GB DDR3 1333MHz SODIM NB RAM, RAM Brand: Kingston

Description

Highlight

JEDEC standard 1.5V (1.425V ~1.575V) Power Supply
VDDQ = 1.5V (1.425V ~ 1.575V)
667MHz fCK for 1333Mb/sec/pin
8 independent internal bank
Programmable CAS Latency: 9, 8, 7, 6
Programmable Additive Latency: 0, CL – 2, or CL – 1 clock
Programmable CAS Write Latency(CWL) = 7 (DDR3-1333)
8-bit pre-fetch

CL(IDD)	9 cycles
Row Cycle Time (tRCmin)	49.5ns (min.)
Refresh to Active/Refresh Command Time (tRFCmin)	260ns (min.)
Row Active Time (tRASmin)	36ns (min.)
Power (Operating)	1.980 W*
UL Rating	94 V – 0
Operating Temperature	0° C to 85° C
Storage Temperature	-55° C to +100° C

Features

Burst Length: 8 (Interleave without any limit, sequential with starting address “000” only), 4 with tCCD = 4 which does not allow seamless read or write [either on the fly using A12 or MRS]
Bi-directional Differential Data Strobe
Internal(self) calibration : Internal self calibration through ZQ pin (RZQ : 240 ohm ± 1%)
On Die Termination using ODT pin
Average Refresh Period 7.8us at lower than TCASE 85°C, 3.9us at 85°C < TCASE < 95°C
Asynchronous Reset
PCB: Height 1.18” (30mm), double sided component