Kingston 4GB DDR3 1333MHz Sodim NB Ram

RM155.00

Kingston

Highlight

  • JEDEC standard 1.5V (1.425V ~1.575V) Power Supply
  • VDDQ = 1.5V (1.425V ~ 1.575V)
  •  667MHz fCK for 1333Mb/sec/pin
  • 8 independent internal bank
  • Programmable CAS Latency: 9, 8, 7, 6
  • Programmable Additive Latency: 0, CL – 2, or CL – 1 clock
  • Programmable CAS Write Latency(CWL) = 7 (DDR3-1333)
  • 8-bit pre-fetch

This document describes ValueRAM's 512M x 64-bit (4GB) DDR3-1333 CL9 SDRAM (Synchronous DRAM), 1Rx8 memory module, based on eight 512M x 8-bit DDR3-1333 FBGA components. The SPD is programmed to JEDEC standard latency DDR3-1333 timing of 9-9-9 at 1.5V. This 204-pin SODIMM uses gold contact fingers. The electrical and mechanical specifications are as follows:

 

CL(IDD) 9 cycles
Row Cycle Time (tRCmin) 49.5ns (min.)
Refresh to Active/Refresh Command Time (tRFCmin) 260ns (min.)
Row Active Time (tRASmin) 36ns (min.)
Power (Operating) 1.980 W*
UL Rating 94 V – 0
Operating Temperature 0° C to 85° C
Storage Temperature -55° C to +100° C

Features

  • Burst Length: 8 (Interleave without any limit, sequential with starting address “000” only), 4 with tCCD = 4 which does not allow seamless read or write [either on the fly using A12 or MRS]
  • Bi-directional Differential Data Strobe
  • Internal(self) calibration : Internal self calibration through ZQ pin (RZQ : 240 ohm ± 1%)
  • On Die Termination using ODT pin
  • Average Refresh Period 7.8us at lower than TCASE 85°C, 3.9us at 85°C < TCASE < 95°C
  • Asynchronous Reset
  • PCB: Height 1.18” (30mm), double sided component

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SKU: RAM-KSTN-KVR13S9S84 Category: Tags: , , Brand:

Description

Highlight

  • JEDEC standard 1.5V (1.425V ~1.575V) Power Supply
  • VDDQ = 1.5V (1.425V ~ 1.575V)
  •  667MHz fCK for 1333Mb/sec/pin
  • 8 independent internal bank
  • Programmable CAS Latency: 9, 8, 7, 6
  • Programmable Additive Latency: 0, CL – 2, or CL – 1 clock
  • Programmable CAS Write Latency(CWL) = 7 (DDR3-1333)
  • 8-bit pre-fetch

This document describes ValueRAM's 512M x 64-bit (4GB) DDR3-1333 CL9 SDRAM (Synchronous DRAM), 1Rx8 memory module, based on eight 512M x 8-bit DDR3-1333 FBGA components. The SPD is programmed to JEDEC standard latency DDR3-1333 timing of 9-9-9 at 1.5V. This 204-pin SODIMM uses gold contact fingers. The electrical and mechanical specifications are as follows:

 

CL(IDD) 9 cycles
Row Cycle Time (tRCmin) 49.5ns (min.)
Refresh to Active/Refresh Command Time (tRFCmin) 260ns (min.)
Row Active Time (tRASmin) 36ns (min.)
Power (Operating) 1.980 W*
UL Rating 94 V – 0
Operating Temperature 0° C to 85° C
Storage Temperature -55° C to +100° C

Features

  • Burst Length: 8 (Interleave without any limit, sequential with starting address “000” only), 4 with tCCD = 4 which does not allow seamless read or write [either on the fly using A12 or MRS]
  • Bi-directional Differential Data Strobe
  • Internal(self) calibration : Internal self calibration through ZQ pin (RZQ : 240 ohm ± 1%)
  • On Die Termination using ODT pin
  • Average Refresh Period 7.8us at lower than TCASE 85°C, 3.9us at 85°C < TCASE < 95°C
  • Asynchronous Reset
  • PCB: Height 1.18” (30mm), double sided component

Additional information

Weight 0.04 kg

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