Kingston 4GB DDR3 1600MHZ RAM FOR NB

RM155.00

Kingston

FEATURES

● JEDEC standard 1.35V (1.28V ~ 1.45V) and 1.5V (1.425V ~1.575V) Power Supply

● VDDQ = 1.35V (1.28V ~ 1.45V) and 1.5V (1.425V ~ 1.575V)

● 800MHz fCK for 1600Mb/sec/pin

● 8 independent internal bank

● Programmable CAS Latency: 11, 10, 9, 8, 7, 6, 5

● Programmable Additive Latency: 0, CL – 2, or CL – 1 clock

● 8-bit pre-fetch

● Burst Length: 8 (Interleave without any limit, sequential with starting address “000” only), 4 with tCCD = 4 which does not allow seamless read or write [either on the fly using A12 or MRS]

● Bi-directional Differential Data Strobe

● Internal(self) calibration : Internal self calibration through ZQ pin (RZQ : 240 ohm ± 1%)

● On Die Termination using ODT pin

● Average Refresh Period 7.8us at lower than TCASE 85°C, 3.9us at 85°C < TCASE ≤ 95°C

● Asynchronous Reset

● PCB: Height1.18” (30mm), double sided component

● Lead Free RoHS Compliant

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SKU: RAM-KSTN-KVR16S11S84 Category: Tags: , , Brand:

Description

SPECIFICATIONS :

FEATURES

● JEDEC standard 1.35V (1.28V ~ 1.45V) and 1.5V (1.425V ~1.575V) Power Supply

● VDDQ = 1.35V (1.28V ~ 1.45V) and 1.5V (1.425V ~ 1.575V)

● 800MHz fCK for 1600Mb/sec/pin

● 8 independent internal bank

● Programmable CAS Latency: 11, 10, 9, 8, 7, 6, 5

● Programmable Additive Latency: 0, CL – 2, or CL – 1 clock

● 8-bit pre-fetch

● Burst Length: 8 (Interleave without any limit, sequential with starting address “000” only), 4 with tCCD = 4 which does not allow seamless read or write [either on the fly using A12 or MRS]

● Bi-directional Differential Data Strobe

● Internal(self) calibration : Internal self calibration through ZQ pin (RZQ : 240 ohm ± 1%)

● On Die Termination using ODT pin

● Average Refresh Period 7.8us at lower than TCASE 85°C, 3.9us at 85°C < TCASE ≤ 95°C

● Asynchronous Reset

● PCB: Height1.18” (30mm), double sided component

● Lead Free RoHS Compliant

Additional information

Weight 0.04 kg

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